maison / des produits / Produits semi-conducteurs discrets / Transistors - FET, MOSFET - Simple / IRLI640GPBF
Référence fabricant | IRLI640GPBF |
---|---|
Numéro de pièce future | FT-IRLI640GPBF |
SPQ / MOQ | Contactez nous |
Matériau d'emballage | Reel/Tray/Tube/Others |
séries | - |
IRLI640GPBF Statut (cycle de vie) | En stock |
Statut de la pièce | Active |
Type de FET | N-Channel |
La technologie | MOSFET (Metal Oxide) |
Drain à la tension source (Vdss) | 200V |
Courant - Drain Continu (Id) à 25 ° C | 9.9A (Tc) |
Tension d’entraînement (Max Rds On, Min Rds On) | 4V, 5V |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 5.9A, 5V |
Vgs (th) (Max) @ Id | 2V @ 250µA |
Gate Gate (Qg) (Max) @ Vgs | 66nC @ 10V |
Vgs (Max) | ±10V |
Capacité d'entrée (Ciss) (Max) @ Vds | 1800pF @ 25V |
Caractéristique FET | - |
Dissipation de puissance (max) | 40W (Tc) |
Température de fonctionnement | -55°C ~ 150°C (TJ) |
Type de montage | Through Hole |
Package d'appareils du fournisseur | TO-220-3 |
Paquet / caisse | TO-220-3 Full Pack, Isolated Tab |
Pays d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRLI640GPBF Poids | Contactez nous |
Numéro de pièce de rechange | IRLI640GPBF-FT |
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