maison / des produits / Produits semi-conducteurs discrets / Transistors - FET, MOSFET - Matrices / SIZ900DT-T1-GE3
Référence fabricant | SIZ900DT-T1-GE3 |
---|---|
Numéro de pièce future | FT-SIZ900DT-T1-GE3 |
SPQ / MOQ | Contactez nous |
Matériau d'emballage | Reel/Tray/Tube/Others |
séries | TrenchFET® |
SIZ900DT-T1-GE3 Statut (cycle de vie) | En stock |
Statut de la pièce | Obsolete |
Type de FET | 2 N-Channel (Half Bridge) |
Caractéristique FET | Logic Level Gate |
Drain à la tension source (Vdss) | 30V |
Courant - Drain Continu (Id) à 25 ° C | 24A, 28A |
Rds On (Max) @ Id, Vgs | 7.2 mOhm @ 19.4A, 10V |
Vgs (th) (Max) @ Id | 2.4V @ 250µA |
Gate Gate (Qg) (Max) @ Vgs | 45nC @ 10V |
Capacité d'entrée (Ciss) (Max) @ Vds | 1830pF @ 15V |
Puissance - Max | 48W, 100W |
Température de fonctionnement | -55°C ~ 150°C (TJ) |
Type de montage | Surface Mount |
Paquet / caisse | 6-PowerPair™ |
Package d'appareils du fournisseur | 6-PowerPair™ |
Pays d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIZ900DT-T1-GE3 Poids | Contactez nous |
Numéro de pièce de rechange | SIZ900DT-T1-GE3-FT |
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