maison / des produits / Produits semi-conducteurs discrets / Transistors - FET, MOSFET - Matrices / SIZ320DT-T1-GE3
Référence fabricant | SIZ320DT-T1-GE3 |
---|---|
Numéro de pièce future | FT-SIZ320DT-T1-GE3 |
SPQ / MOQ | Contactez nous |
Matériau d'emballage | Reel/Tray/Tube/Others |
séries | PowerPAIR®, TrenchFET® |
SIZ320DT-T1-GE3 Statut (cycle de vie) | En stock |
Statut de la pièce | Active |
Type de FET | 2 N-Channel (Dual) |
Caractéristique FET | Standard |
Drain à la tension source (Vdss) | 25V |
Courant - Drain Continu (Id) à 25 ° C | 30A (Tc), 40A (Tc) |
Rds On (Max) @ Id, Vgs | 8.3 mOhm @ 8A, 10V, 4.24 mOhm @ 10A, 10V |
Vgs (th) (Max) @ Id | 2.4V @ 250µA |
Gate Gate (Qg) (Max) @ Vgs | 8.9nC @ 4.5V, 11.9nC @ 4.5V |
Capacité d'entrée (Ciss) (Max) @ Vds | 660pF @ 12.5V, 1370pF @ 12.5V |
Puissance - Max | 16.7W, 31W |
Température de fonctionnement | -55°C ~ 150°C (TJ) |
Type de montage | Surface Mount |
Paquet / caisse | 8-PowerWDFN |
Package d'appareils du fournisseur | 8-Power33 (3x3) |
Pays d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIZ320DT-T1-GE3 Poids | Contactez nous |
Numéro de pièce de rechange | SIZ320DT-T1-GE3-FT |
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