maison / des produits / Produits semi-conducteurs discrets / Transistors - FET, MOSFET - Matrices / SQJ992EP-T1_GE3
Référence fabricant | SQJ992EP-T1_GE3 |
---|---|
Numéro de pièce future | FT-SQJ992EP-T1_GE3 |
SPQ / MOQ | Contactez nous |
Matériau d'emballage | Reel/Tray/Tube/Others |
séries | Automotive, AEC-Q101, TrenchFET® |
SQJ992EP-T1_GE3 Statut (cycle de vie) | En stock |
Statut de la pièce | Active |
Type de FET | 2 N-Channel (Dual) |
Caractéristique FET | Standard |
Drain à la tension source (Vdss) | 60V |
Courant - Drain Continu (Id) à 25 ° C | 15A |
Rds On (Max) @ Id, Vgs | 56.2 mOhm @ 3.7A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Gate Gate (Qg) (Max) @ Vgs | 12nC @ 10V |
Capacité d'entrée (Ciss) (Max) @ Vds | 446pF @ 30V |
Puissance - Max | 34W |
Température de fonctionnement | -55°C ~ 175°C (TJ) |
Type de montage | Surface Mount |
Paquet / caisse | PowerPAK® SO-8 Dual |
Package d'appareils du fournisseur | PowerPAK® SO-8 Dual |
Pays d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
SQJ992EP-T1_GE3 Poids | Contactez nous |
Numéro de pièce de rechange | SQJ992EP-T1_GE3-FT |
ALD1102PAL
Advanced Linear Devices Inc.
ALD1115PAL
Advanced Linear Devices Inc.
ALD1101PAL
Advanced Linear Devices Inc.
ALD110900APAL
Advanced Linear Devices Inc.
ALD110900PAL
Advanced Linear Devices Inc.
ALD1101APAL
Advanced Linear Devices Inc.
ALD1101BPAL
Advanced Linear Devices Inc.
ALD1102BPAL
Advanced Linear Devices Inc.
ALD110902PAL
Advanced Linear Devices Inc.
ALD110904PAL
Advanced Linear Devices Inc.
A1020B-1VQ80C
Microsemi Corporation
EX256-FTQG100
Microsemi Corporation
EP20K400EFC672-2N
Intel
5SGXEA3K2F40C2L
Intel
A3PE1500-FGG676I
Microsemi Corporation
LFE2M50SE-6FN672I
Lattice Semiconductor Corporation
LCMXO3LF-9400E-5MG256C
Lattice Semiconductor Corporation
LFE3-95E-6FN672C
Lattice Semiconductor Corporation
EP3C40F324C8N
Intel
EP4SGX290FF35I3N
Intel