maison / des produits / Produits semi-conducteurs discrets / Transistors - FET, MOSFET - Matrices / SQJ260EP-T1_GE3
Référence fabricant | SQJ260EP-T1_GE3 |
---|---|
Numéro de pièce future | FT-SQJ260EP-T1_GE3 |
SPQ / MOQ | Contactez nous |
Matériau d'emballage | Reel/Tray/Tube/Others |
séries | Automotive, AEC-Q101, TrenchFET® |
SQJ260EP-T1_GE3 Statut (cycle de vie) | En stock |
Statut de la pièce | Active |
Type de FET | 2 N-Channel (Dual) |
Caractéristique FET | Standard |
Drain à la tension source (Vdss) | 60V |
Courant - Drain Continu (Id) à 25 ° C | 20A (Tc), 54A (Tc) |
Rds On (Max) @ Id, Vgs | 19 mOhm @ 6A, 10V, 8.5 mOhm @ 10A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Gate Gate (Qg) (Max) @ Vgs | 20nC @ 10V, 40nC @ 10V |
Capacité d'entrée (Ciss) (Max) @ Vds | 1100pF @ 25V, 2500pF @ 25V |
Puissance - Max | 27W (Tc), 48W (Tc) |
Température de fonctionnement | -55°C ~ 175°C (TJ) |
Type de montage | Surface Mount |
Paquet / caisse | PowerPAK® SO-8 Dual |
Package d'appareils du fournisseur | PowerPAK® SO-8 Dual Asymmetric |
Pays d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
SQJ260EP-T1_GE3 Poids | Contactez nous |
Numéro de pièce de rechange | SQJ260EP-T1_GE3-FT |
ALD110902SAL
Advanced Linear Devices Inc.
ALD110904SAL
Advanced Linear Devices Inc.
ALD1101BSAL
Advanced Linear Devices Inc.
ALD1102ASAL
Advanced Linear Devices Inc.
ALD1102BSAL
Advanced Linear Devices Inc.
ALD1102SAL
Advanced Linear Devices Inc.
ALD110900SAL
Advanced Linear Devices Inc.
ALD110908SAL
Advanced Linear Devices Inc.
ALD1110ESAL
Advanced Linear Devices Inc.
ALD1115SAL
Advanced Linear Devices Inc.
A42MX36-3BGG272
Microsemi Corporation
A3PE600-PQG208I
Microsemi Corporation
LFE2M70SE-5FN1152I
Lattice Semiconductor Corporation
LFE2M70E-7F1152C
Lattice Semiconductor Corporation
EP4CE115F23C8L
Intel
XC4010XL-1PC84C
Xilinx Inc.
XC2V4000-5FF1152I
Xilinx Inc.
LFXP2-17E-5FTN256I
Lattice Semiconductor Corporation
LCMXO2-256HC-4MG132C
Lattice Semiconductor Corporation
EPF10K100EQC208-2X
Intel