maison / des produits / Produits semi-conducteurs discrets / Transistors - FET, MOSFET - Matrices / SQJ202EP-T1_GE3
Référence fabricant | SQJ202EP-T1_GE3 |
---|---|
Numéro de pièce future | FT-SQJ202EP-T1_GE3 |
SPQ / MOQ | Contactez nous |
Matériau d'emballage | Reel/Tray/Tube/Others |
séries | Automotive, AEC-Q101, TrenchFET® |
SQJ202EP-T1_GE3 Statut (cycle de vie) | En stock |
Statut de la pièce | Active |
Type de FET | 2 N-Channel (Dual) |
Caractéristique FET | Standard |
Drain à la tension source (Vdss) | 12V |
Courant - Drain Continu (Id) à 25 ° C | 20A, 60A |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 15A, 10V |
Vgs (th) (Max) @ Id | 2V @ 250µA |
Gate Gate (Qg) (Max) @ Vgs | 22nC @ 10V |
Capacité d'entrée (Ciss) (Max) @ Vds | 975pF @ 6V |
Puissance - Max | 27W, 48W |
Température de fonctionnement | -55°C ~ 175°C (TJ) |
Type de montage | Surface Mount |
Paquet / caisse | PowerPAK® SO-8 Dual |
Package d'appareils du fournisseur | PowerPAK® SO-8 Dual Asymmetric |
Pays d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
SQJ202EP-T1_GE3 Poids | Contactez nous |
Numéro de pièce de rechange | SQJ202EP-T1_GE3-FT |
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