maison / des produits / Circuits intégrés (CI) / Mémoire / MB85R4M2TFN-G-ASE1
Référence fabricant | MB85R4M2TFN-G-ASE1 |
---|---|
Numéro de pièce future | FT-MB85R4M2TFN-G-ASE1 |
SPQ / MOQ | Contactez nous |
Matériau d'emballage | Reel/Tray/Tube/Others |
séries | - |
MB85R4M2TFN-G-ASE1 Statut (cycle de vie) | En stock |
Statut de la pièce | Active |
Type de mémoire | Non-Volatile |
Format de mémoire | FRAM |
La technologie | FRAM (Ferroelectric RAM) |
Taille mémoire | 4Mb (256K x 16) |
Fréquence d'horloge | - |
Ecrire le temps de cycle - Word, Page | 150ns |
Temps d'accès | 150ns |
Interface mémoire | Parallel |
Tension - Alimentation | 1.8V ~ 3.6V |
Température de fonctionnement | -40°C ~ 85°C (TA) |
Type de montage | Surface Mount |
Paquet / caisse | 44-TSOP (0.400", 10.16mm Width) |
Package d'appareils du fournisseur | 44-TSOP |
Pays d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
MB85R4M2TFN-G-ASE1 Poids | Contactez nous |
Numéro de pièce de rechange | MB85R4M2TFN-G-ASE1-FT |
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