maison / des produits / Circuits intégrés (CI) / Mémoire / IS61DDB21M18A-300M3L
Référence fabricant | IS61DDB21M18A-300M3L |
---|---|
Numéro de pièce future | FT-IS61DDB21M18A-300M3L |
SPQ / MOQ | Contactez nous |
Matériau d'emballage | Reel/Tray/Tube/Others |
séries | - |
IS61DDB21M18A-300M3L Statut (cycle de vie) | En stock |
Statut de la pièce | Active |
Type de mémoire | Volatile |
Format de mémoire | SRAM |
La technologie | SRAM - Synchronous, DDR II |
Taille mémoire | 18Mb (1M x 18) |
Fréquence d'horloge | 300MHz |
Ecrire le temps de cycle - Word, Page | - |
Temps d'accès | - |
Interface mémoire | Parallel |
Tension - Alimentation | 1.71V ~ 1.89V |
Température de fonctionnement | 0°C ~ 70°C (TA) |
Type de montage | Surface Mount |
Paquet / caisse | 165-LBGA |
Package d'appareils du fournisseur | 165-LFBGA (13x15) |
Pays d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
IS61DDB21M18A-300M3L Poids | Contactez nous |
Numéro de pièce de rechange | IS61DDB21M18A-300M3L-FT |
IS66WVE1M16BLL-55BLI-TR
ISSI, Integrated Silicon Solution Inc
IS66WVE1M16BLL-70BLI
ISSI, Integrated Silicon Solution Inc
IS66WVE1M16BLL-70BLI-TR
ISSI, Integrated Silicon Solution Inc
IS66WVE1M16EBLL-55BLI
ISSI, Integrated Silicon Solution Inc
IS66WVE1M16EBLL-55BLI-TR
ISSI, Integrated Silicon Solution Inc
IS66WVE2M16ALL-7010BLI
ISSI, Integrated Silicon Solution Inc
IS66WVE2M16ALL-7010BLI-TR
ISSI, Integrated Silicon Solution Inc
IS66WVE2M16BLL-70BLI
ISSI, Integrated Silicon Solution Inc
IS66WVE2M16BLL-70BLI-TR
ISSI, Integrated Silicon Solution Inc
IS66WVE2M16DBLL-70BLI
ISSI, Integrated Silicon Solution Inc
XC4013XL-2HT144C
Xilinx Inc.
LFXP6E-4TN144C
Lattice Semiconductor Corporation
A1020B-PQG100C
Microsemi Corporation
XC3S250E-5VQG100C
Xilinx Inc.
A3P600-2FGG256I
Microsemi Corporation
A3P1000-PQG208I
Microsemi Corporation
A42MX16-1PQG208M
Microsemi Corporation
LFE3-35EA-6FTN256I
Lattice Semiconductor Corporation
LFEC6E-3F484C
Lattice Semiconductor Corporation
LCMXO2-2000HE-5MG132I
Lattice Semiconductor Corporation