maison / des produits / Circuits intégrés (CI) / Mémoire / GD25S512MDYIGR
Référence fabricant | GD25S512MDYIGR |
---|---|
Numéro de pièce future | FT-GD25S512MDYIGR |
SPQ / MOQ | Contactez nous |
Matériau d'emballage | Reel/Tray/Tube/Others |
séries | - |
GD25S512MDYIGR Statut (cycle de vie) | En stock |
Statut de la pièce | Active |
Type de mémoire | Non-Volatile |
Format de mémoire | FLASH |
La technologie | FLASH - NOR |
Taille mémoire | 512Mb (64M x 8) |
Fréquence d'horloge | 104MHz |
Ecrire le temps de cycle - Word, Page | 50µs, 2.4ms |
Temps d'accès | - |
Interface mémoire | SPI - Quad I/O |
Tension - Alimentation | 2.7V ~ 3.6V |
Température de fonctionnement | -40°C ~ 85°C (TA) |
Type de montage | Surface Mount |
Paquet / caisse | 8-WDFN Exposed Pad |
Package d'appareils du fournisseur | 8-WSON (6x8) |
Pays d'origine | USA/JAPAN/MALAYSIA/MEXICO/CN |
GD25S512MDYIGR Poids | Contactez nous |
Numéro de pièce de rechange | GD25S512MDYIGR-FT |
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